| PART |
Description |
Maker |
| IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRLML6302PBF |
Generation V Technology Ultra Low On-Resustance P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7503 IRF7503TR |
Generation V Technology
Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
